Details

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BUY BSM75GAL120D https://www.utsource.net/itm/p/2853.html
IGBT Power Module

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CESM	-	-	1200	V
Emitter-Collector Voltage	V CES	-	-	1200	V
Gate-Emitter Voltage	V GES	-	-	±20	V
Continuous Collector Current	I C	-	75	-	A	T C = 25°C
Pulse Collector Current	I CM	-	300	-	A	t p = 10 μs, I G = 10 A
Power Dissipation	P TOT	-	-	250	W	T C = 25°C
Junction Temperature	T J	-	-	175	°C
Storage Temperature	T STG	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to the gate terminal.

2. Gate Drive Requirements:

   • Apply gate voltage within the specified range to prevent damage.
   • Ensure adequate current drive capability for reliable turn-on.

3. Operating Conditions:

   • Do not exceed maximum ratings at any time.
   • Operate within recommended thermal conditions to ensure longevity and performance.

4. Storage and Environment:

   • Store in a dry environment within the storage temperature range.
   • Protect from static electricity during handling.

5. Installation:

   • Follow manufacturer guidelines for mounting torque and methods.
   • Verify correct orientation before installation.

6. Testing:

   • Use appropriate test equipment that can accurately measure high voltages and currents.
   • Perform tests under controlled conditions to avoid overstressing the device.

Note: Always refer to the latest datasheet provided by the manufacturer for detailed specifications and updates.

(For reference only)