Details

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BUY TT18N1200KOF https://www.utsource.net/itm/p/4816.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	1200	V
Emitter-Collector Voltage	VEC	-	-	1200	V
Gate-Source Voltage	VGS	-15	-	15	V
Continuous Collector Current	IC	-	36	-	A
Pulse Collector Current (tp = 10 μs)	IC(p)	-	144	-	A
Power Dissipation	PT	-	-	150	W
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C
Thermal Resistance, Junction to Case	RthJC	-	0.5	-	K/W

Instructions for Use

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified range.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure good thermal contact between the device and the heat sink.
   • Use a suitable thermal compound to enhance heat transfer.
   • Torque the mounting screws to the recommended specifications to avoid damage.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits to ensure reliable operation.
   • Ensure the gate drive circuitry is capable of providing sufficient current to charge and discharge the gate capacitance quickly.

4. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive collector current.
   • Monitor the device temperature and reduce the load if it exceeds the maximum junction temperature.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and corrosive environments.

6. Testing:

   • When testing the device, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury to personnel.

7. Derating:

   • For continuous operation, derate the maximum current and power ratings based on ambient temperature and cooling conditions.

8. Compliance:

   • Ensure that the device complies with all relevant safety and regulatory standards for your application.

(For reference only)