Details

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BUY MG25J2YS40 https://www.utsource.net/itm/p/5581.html
TRANSISTOR 25 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

Parameter	Description	Value	Unit
Part Number	Device Identifier	MG25J2YS40	-
Type	Device Type	MOSFET	-
Configuration	Channel Type	N-Channel	-
Package	Housing Style	TO-252	-
Drain-Source Voltage (Vds)	Maximum Voltage between Drain and Source	40	V
Gate-Source Voltage (Vgs)	Maximum Voltage between Gate and Source	±20	V
Continuous Drain Current (Id)	Maximum Continuous Drain Current at Tc = 25°C	2.5	A
Pulse Drain Current (Idm)	Maximum Pulse Drain Current (t = 10 μs, Duty Cycle = 1%)	13	A
Power Dissipation (Pd)	Maximum Power Dissipation at Tc = 25°C	2.1	W
Rds(on)	On-State Resistance at Vgs = 10V	0.028	Ω
Gate Charge (Qg)	Total Gate Charge	35	nC
Input Capacitance (Ciss)	Input Capacitance at Vds = 10V, f = 1 MHz	670	pF
Output Capacitance (Coss)	Output Capacitance at Vds = 10V, f = 1 MHz	220	pF
Reverse Transfer Capacitance (Crss)	Reverse Transfer Capacitance at Vds = 10V, f = 1 MHz	150	pF
Operating Temperature Range (Tj)	Junction Temperature Range	-55 to 150	°C
Storage Temperature Range (Tstg)	Storage Temperature Range	-65 to 150	°C

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the leads or the body.
   • Use appropriate ESD protection to prevent damage from static electricity.

2. Mounting:

   • Ensure that the device is mounted on a suitable heatsink if operating at high currents or power levels to maintain junction temperature within the specified range.
   • Use thermal compound between the device and heatsink to improve heat dissipation.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals as per the circuit requirements.
   • Ensure that the gate-source voltage (Vgs) does not exceed the maximum rating of ±20V to avoid damaging the device.

4. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it remains within the operating range of -55°C to 150°C.
   • Use forced air cooling or a larger heatsink if necessary to manage heat dissipation effectively.

5. Pulse Operation:

   • When using the device in pulse applications, ensure that the pulse drain current (Idm) does not exceed 13A for pulses of 10 μs duration and a duty cycle of 1%.

6. Storage:

   • Store the device in a dry, cool place within the storage temperature range of -65°C to 150°C.
   • Avoid exposure to high humidity and corrosive environments.

7. Testing:

   • Use appropriate test equipment and methods to verify the device parameters before and after installation.
   • Refer to the datasheet for specific test conditions and procedures.

(For reference only)