Details

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BUY NM93C06EN https://www.utsource.net/itm/p/139667.html
256-Bit Serial CMOS EEPROM MICROWIRE⑩ Synchronous Bus

Parameter	Symbol	Min	Typical	Max	Unit	Description
Supply Voltage	Vcc	2.7	-	5.5	V	Operating voltage range
Standby Current	Icc	-	100	-	nA	Quiescent current in standby mode
Operating Current	Icc	-	100	-	μA	Active current consumption
Output Current (High)	Ioh	-	4.0	-	mA	Maximum output current when high
Output Current (Low)	Iol	-	8.0	-	mA	Maximum output current when low
Data Retention Time	Tr	-	100	-	years	Data retention time at 85°C
Write Cycle Time	Twc	-	10	-	ms	Time required to complete a write cycle
Write Enable Time	Tew	-	0.1	-	μs	Time for write enable to take effect
Write Disable Time	Tdw	-	0.1	-	μs	Time for write disable to take effect
Chip Erase Time	Tec	-	100	-	ms	Time required to erase the entire chip
Operating Temperature	Topr	-40	-	85	°C	Operating temperature range
Storage Temperature	Tstg	-65	-	150	°C	Storage temperature range

Instructions for NM93C06EN

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 5.5V.
   • Use a stable power source to avoid voltage fluctuations that could affect performance.

2. Write Operation:

   • Set the Write Enable (WE) pin high to initiate a write operation.
   • Apply the data and address lines as required.
   • Wait for the write cycle time (Twc) of 10 ms to ensure the data is written correctly.
   • Set the WE pin low to complete the write operation.

3. Read Operation:

   • Set the Chip Select (CS) pin low to activate the device.
   • Apply the desired address to the address lines.
   • The data will be available on the data lines after a short delay.
   • Set the CS pin high to deactivate the device.

4. Chip Erase:

   • Set the Chip Erase (CE) pin high to initiate a chip erase operation.
   • Wait for the chip erase time (Tec) of 100 ms to ensure all memory is erased.
   • Set the CE pin low to complete the erase operation.

5. Standby Mode:

   • Set the CS pin high to put the device into standby mode.
   • In this mode, the device consumes minimal power (100 nA).

6. Temperature Considerations:

   • Ensure the operating temperature is within the range of -40°C to 85°C.
   • Store the device in a temperature range of -65°C to 150°C to maintain data integrity.

7. Handling Precautions:

   • Handle the device with care to avoid static discharge, which can damage the internal circuits.
   • Follow proper soldering techniques to avoid thermal stress during installation.

By following these parameters and instructions, you can ensure reliable operation of the NM93C06EN non-volatile memory device.

(For reference only)