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BUY PS21865 https://www.utsource.net/itm/p/141578.html
IGBT Module; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vcesat:1.6V; Power Dissipation, Pd:52.6W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
Description: Matsushita Module Features: Compact size Low power consumption High reliability High speed switching High temperature operation Low EMI Low noise High speed response High accuracy Low cost Applications: Automotive electronics Industrial automation Telecommunications Consumer electronics Medical equipment Power supplies Robotics (For reference only)