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BUY MG500Q1US1 https://www.utsource.net/itm/p/199827.html
GTR Module Silicon N Channel IGBT
Description: The MG500Q1US1 is a high-performance, three-phase, insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. Features: High-speed switching performance Low on-state resistance Low noise High-speed diode High-speed freewheeling diode Low-inductance package Low-inductance design High-temperature operation Applications: The MG500Q1US1 is suitable for a wide range of applications, including motor control, power supplies, and inverters. It is also suitable for use in high-power switching applications, such as UPS systems, welding machines, and solar inverters. (For reference only)