Details

---

BUY MG200Q1JS9 https://www.utsource.net/itm/p/199829.html
TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG200Q1JS9 is a high-power insulated gate bipolar transistor (IGBT) module from Toshiba America Electronic Components. It is designed for use in motor control applications such as AC servo motors, AC induction motors, and brushless DC motors. Features: High-power insulated gate bipolar transistor (IGBT) module Rated voltage: 600V Maximum collector current: 200A Maximum collector-emitter voltage: 600V Maximum junction temperature: 150°C Low on-state resistance High-speed switching Low inductance Low noise Application: The MG200Q1JS9 is suitable for use in motor control applications such as AC servo motors, AC induction motors, and brushless DC motors. It is also suitable for use in power supplies, welding machines, and other industrial applications. (For reference only)