Details

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BUY MG100Q2YS42 https://www.utsource.net/itm/p/199973.html
Vces (volts) = 1200 ;; Ic (amps) = 100 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5 ;; Additional Information = More Info
Description: This is a high voltage insulated gate bipolar transistor (IGBT) module manufactured by Toshiba. Features: * High voltage rating of 1200V * Low on-state resistance of 0.6 ohms * High current capacity of 100A * Low switching loss Applications: This IGBT module is suitable for a variety of applications, including motor control, power conversion, and power supply systems. It is also suitable for use in high-frequency switching applications. (For reference only)