Details

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BUY PM10CSJ060 https://www.utsource.net/itm/p/199998.html
FLAT-BASE TYPE INSULATED PACKAGE

Below is the parameter table and instructions for the PM10CSJ060 MOSFET.

PM10CSJ060 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	60	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	-	10	A	TC = 25°C
Continuous Drain Current (TJ = 150°C)	ID(TJ)	-	-	5.3	A	TJ = 150°C
Pulse Drain Current	IDM	-	-	30	A	tp = 10 μs, TJ = 25°C
Total Power Dissipation	PTOT	-	-	140	W	TC = 25°C
Junction-to-Ambient Thermal Resistance	RθJA	-	-	62	°C/W
Junction-to-Case Thermal Resistance	RθJC	-	-	1.5	°C/W
Gate Charge	QG	-	30	50	nC	VGS = 10V, ID = 10A
Input Capacitance	Ciss	-	1500	2500	pF	VDS = 10V, f = 1 MHz
Output Capacitance	Coss	-	450	750	pF	VDS = 10V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	350	550	pF	VDS = 10V, f = 1 MHz
On-State Resistance	RDS(on)	-	6.0	8.0	mΩ	VGS = 10V, ID = 10A, TJ = 25°C
Threshold Voltage	VGS(th)	1.0	2.0	3.0	V	ID = 1 mA, TJ = 25°C
Maximum Operating Junction Temperature	TJ(max)	-	-	150	°C

Instructions for Use

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid damage to the leads and the body.
   • Use appropriate tools and techniques for mounting to prevent mechanical stress on the device.

2. Thermal Management:

   • Ensure adequate heat dissipation by using a heatsink or heat spreader if necessary.
   • Check the thermal resistance values (R_θJA and R_θJC) to ensure that the device does not exceed its maximum operating junction temperature (T_J(max)).

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly to avoid damage.
   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum ratings to prevent gate oxide breakdown.

4. Power Dissipation:

   • Calculate the power dissipation (P_TOT) based on the load current and on-state resistance (R_DS(on)).
   • Ensure that the total power dissipation does not exceed the maximum rating to avoid overheating.

5. Gate Drive:

   • Use a suitable gate drive circuit to provide the necessary gate voltage (V_GS) and current.
   • Consider the gate charge (Q_G) when designing the gate drive circuit to minimize switching losses.

6. Storage and Packaging:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions during handling and storage to avoid damage to the device.

By following these instructions, you can ensure reliable operation and long-term performance of the PM10CSJ060 MOSFET.

(For reference only)