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BUY BSM35GD120DN2 https://www.utsource.net/itm/p/200177.html
High Efficient Rectifier Diodes
Description: The BSM35GD120DN2 is a 1200V, 35A insulated gate bipolar transistor (IGBT) module from EUPEC. Features: * Low conduction losses * High switching frequency * Low switching losses * High surge current capability * Low EMI Applications: The BSM35GD120DN2 is suitable for a wide range of applications, including motor control, power supplies, UPS systems, and renewable energy systems. It can also be used in high-power switching applications, such as welding machines and induction heating. (For reference only)