Details

---

BUY MG25Q6ES50A https://www.utsource.net/itm/p/200196.html
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
Description: The MG25Q6ES50A is a 6-bit MOSFET module from Toshiba America Electronic Components. It is a high-speed, low-power, low-voltage MOSFET module designed for use in power management applications. Features: Low on-resistance Low gate charge Low input capacitance Low input and output leakage High-speed switching Low-voltage operation Low power consumption High reliability Applications: The MG25Q6ES50A is suitable for use in a wide range of power management applications, including: DC-DC converters Motor control LED lighting Power supplies Automotive applications Battery management systems Solar energy systems (For reference only)