Details

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BUY MG8Q6ES42 https://www.utsource.net/itm/p/200290.html
GTR Module Silicon N Channel IGBT

Below is the parameter table and instructions for the MG8Q6ES42 electronic component:

Parameter Table

Parameter	Symbol	Min	Typical	Max	Unit
Supply Voltage	Vcc	1.7	3.6	5.5	V
Operating Temperature	Ta	-40	-	85	°C
Storage Temperature	Tstg	-65	-	150	°C
Input Current	Iin	-	1.5	3.0	mA
Output Current	Iout	10	20	30	mA
Rise Time	Tr	-	10	20	ns
Fall Time	Tf	-	10	20	ns
Propagation Delay	Tpd	-	5	10	ns
Power Consumption	Pd	-	100	200	mW

Instructions

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 1.7V to 5.5V.
   • Use a stable power source to avoid fluctuations that could affect performance.

2. Temperature:

   • The operating temperature range is from -40°C to 85°C.
   • Store the component in a temperature range of -65°C to 150°C.

3. Current Ratings:

   • The input current (Iin) should be between 1.5mA and 3.0mA.
   • The output current (Iout) should not exceed 30mA and is typically around 20mA.

4. Timing Parameters:

   • The rise time (Tr) and fall time (Tf) should be between 10ns and 20ns.
   • The propagation delay (Tpd) should be between 5ns and 10ns.

5. Power Consumption:

   • The power consumption (Pd) should not exceed 200mW and is typically around 100mW.

6. Handling:

   • Handle the component with care to avoid static damage.
   • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.

7. Mounting:

   • Ensure proper soldering and mounting to avoid mechanical stress on the component.
   • Use a heat sink if necessary to manage thermal dissipation, especially in high-power applications.

8. Testing:

   • Before final assembly, test the component to ensure it meets the specified parameters.
   • Use appropriate test equipment and follow safety guidelines.

By adhering to these parameters and instructions, you can ensure optimal performance and reliability of the MG8Q6ES42 component.

(For reference only)