Details

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BUY MG100J6ES52 https://www.utsource.net/itm/p/200303.html
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Below is the parameter table and instructions for the MG100J6ES52, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) component.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	VDS	-	-	100	V
Gate-Source Voltage	VGS	-10	-	10	V
Continuous Drain Current	ID	-	-	6.0	A
Pulse Drain Current	ID(pulse)	-	-	30	A
Power Dissipation	Ptot	-	-	52	W
Junction Temperature	TJ	-55	-	175	°C
Storage Temperature	TSTG	-55	-	150	°C
Thermal Resistance (Junction to Case)	RθJC	-	1.0	-	°C/W
Input Capacitance	Ciss	-	1200	-	pF
Output Capacitance	Coss	-	400	-	pF
Gate Charge	Qg	-	50	-	nC

Instructions

1. Handling and Storage:

   • Handle the MG100J6ES52 with care to avoid damage to the leads or the body.
   • Store the component in a dry, cool place within the specified storage temperature range (-55°C to 150°C).

2. Mounting:

   • Ensure that the mounting surface is clean and flat to achieve good thermal contact.
   • Use a heat sink if necessary to manage the power dissipation and keep the junction temperature within the specified range.

3. Soldering:

   • Preheat the component to 125°C before soldering to minimize thermal shock.
   • Use a soldering iron with a temperature setting between 260°C and 300°C.
   • Solder each lead for no more than 3 seconds to prevent overheating.

4. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals according to the circuit diagram.
   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum rating of ±10V.
   • The drain-source voltage (V_DS) should not exceed 100V.

5. Power Dissipation:

   • Calculate the power dissipation (P_tot) to ensure it does not exceed 52W.
   • Use a heat sink or other cooling methods if the power dissipation is high to maintain the junction temperature below 175°C.

6. Capacitance Considerations:

   • Take into account the input capacitance (C_iss) and output capacitance (C_oss) when designing the circuit to avoid instability or performance issues.

7. Gate Drive:

   • Provide sufficient gate drive current to charge and discharge the gate capacitance quickly, ensuring fast switching times.
   • The gate charge (Q_g) is approximately 50nC, which affects the switching speed and efficiency.

By following these instructions, you can ensure the reliable operation and longevity of the MG100J6ES52 MOSFET in your application.

(For reference only)