Details

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BUY MG300H1FL1 https://www.utsource.net/itm/p/200374.html

Parameter	Description	Value	Unit
Part Number	Full part identification	MG300H1FL1	-
Type	Device type	MOSFET	-
Configuration	Configuration of the device	N-Channel Enhancement Mode	-
VDSS	Drain-to-Source Voltage	300	V
ID	Continuous Drain Current	26	A
RDS(on)	On-Resistance at VGS=10V	5.5	mΩ
VGS(th)	Gate Threshold Voltage	2.8 to 4.5	V
PD	Total Power Dissipation	17.5	W
TJ	Junction Temperature Range	-55 to +150	°C
Package	Package Type	TO-220	-

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage to the leads and body.
   • Use proper ESD (Electrostatic Discharge) precautions to prevent damage.

2. Mounting:

   • Ensure that the mounting surface is clean and flat.
   • Apply thermal compound between the device and heat sink if necessary for optimal thermal performance.

3. Soldering:

   • Preheat the board before soldering.
   • Solder within the recommended temperature range of 260°C for no more than 10 seconds per lead.
   • Allow adequate cooling time after soldering.

4. Operation:

   • Operate within specified voltage and current limits.
   • Monitor junction temperature to ensure it remains within safe operating limits.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against static damage.

(For reference only)