Details

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BUY DD160F120 https://www.utsource.net/itm/p/200910.html
CONNECTOR ACCESSORY

Parameter	Description	Value	Unit
Part Number	Device Identifier	DD160F120	-
Type	Device Type	IGBT	-
VCES	Collector-Emitter Breakdown Voltage	1200	V
IC	Continuous Collector Current	160	A
EAS	Avalanche Energy	8.4	mJ
RTH(j-c)	Thermal Resistance Junction to Case	0.3	K/W
TJ	Operating Junction Temperature Range	-40 to 150	°C
FT	Transition Frequency	75	kHz
VGE(th)	Gate-Threshold Voltage	15	V
Qg	Total Gate Charge	90	nC
VCE(sat)	Collector-Emitter Saturation Voltage at IC=160A, IG=15A	2.2	V
t(f)	Turn-off Time	1.4	μs
t(r)	Reverse Recovery Time	0.8	μs

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper mounting on a heatsink to manage the thermal resistance.
   • Handle with care to avoid damage to the pins and body.

2. Biasing and Drive Conditions:

   • Apply gate voltage (VGE) as specified in the datasheet to ensure reliable switching.
   • Maintain collector current (IC) within the rated limit to prevent overheating or damage.

3. Thermal Management:

   • Operate within the specified junction temperature range (-40°C to 150°C).
   • Monitor and control the device temperature during operation using appropriate cooling methods.

4. Switching Operations:

   • Ensure that switching frequencies do not exceed the transition frequency (FT) to maintain efficiency and reliability.
   • Consider the turn-off time (t(f)) and reverse recovery time (t(r)) in circuit design to minimize switching losses.

5. Storage and Environment:

   • Store in a dry environment away from moisture and corrosive substances.
   • Avoid exposure to extreme temperatures during storage and transport.

6. Safety Precautions:

   • Always use protective equipment when handling high-power devices.
   • Ensure proper grounding and isolation to prevent electrical hazards.

(For reference only)