Details

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BUY MG75Q2YS43 https://www.utsource.net/itm/p/243635.html
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description	Value	Unit
Part Number	Device Identifier	MG75Q2YS43	-
Type	Component Type	MOSFET	-
Package	Encapsulation Style	TO-252	-
VDS	Drain-Source Voltage	75	V
ID	Continuous Drain Current	2	A
PD	Power Dissipation	0.8	W
RDS(on)	On-State Resistance at 25°C	0.16	Ω
Qg	Total Gate Charge	29	nC
VGS(th)	Gate Threshold Voltage	2.0 to 4.0	V
TJ	Junction Temperature Range	-55 to 150	°C

Instructions:

1. Handling: Use appropriate ESD (Electrostatic Discharge) protection when handling the MG75Q2YS43 to avoid damage.
2. Mounting: Ensure proper mounting orientation and secure attachment according to the manufacturer’s guidelines for the TO-252 package.
3. Soldering: Follow recommended soldering profiles to prevent thermal damage. Avoid excessive heat and duration during soldering.
4. Testing: Before incorporating into a circuit, test the component using specified test conditions to ensure it meets performance criteria.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
6. Application: Suitable for applications requiring high efficiency and low on-resistance, such as power supplies, motor control, and switching circuits.

(For reference only)