MG150N2YS40

MG150N2YS40

Category: Modules

Specifications
SKU
244340
Details

BUY MG150N2YS40 https://www.utsource.net/itm/p/244340.html
TRANSISTOR 150 A, 1000 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG150N2YS40 is a high-power insulated gate bipolar transistor (IGBT) module from Toshiba America Electronic Components. It is designed for use in motor control, welding, and other power applications. Features: High power rating of 150A/600V Low on-state voltage drop Low switching losses High frequency operation Low noise operation Low EMI/RFI High surge capability RoHS compliant Application: The MG150N2YS40 is suitable for a wide range of applications including motor control, welding, and other power applications. It is ideal for use in high-power switching applications such as AC motor drives, welding machines, and UPS systems. (For reference only)

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