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IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
Description: The BSM50GD120DN2 is an insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses High frequency operation Low EMI Low thermal resistance High reliability Application: The BSM50GD120DN2 is suitable for use in a wide range of applications, including motor drives, UPS systems, welding machines, and power supplies. (For reference only)
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