Details

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BUY W29C020CP90B https://www.utsource.net/itm/p/264856.html
256K X 8 CMOS FLASH MEMORY

Parameter	Description	Value
Device Type	Flash Memory	2 Mbit (256K x 8)
Package	Plastic Dual In-Line Package (PDIP)	32-Pin
Operating Voltage (Vcc)	Supply Voltage Range	2.7V to 3.6V
Standby Current ( typical )	Quiescent Current	1 μA (max) at 3.0V
Active Current	Read Current	4 mA (max) at 3.0V, 55 MHz
Access Time	Read Cycle Time	70 ns (max) at 3.0V, 55 MHz
Write Operation	Page Program Time	2 ms (max) for 256 bytes
Block Erase Time	Block Erase Time	4 ms (max) for 64 Kbytes
Chip Erase Time	Full Chip Erase Time	30 s (max)
Endurance	Write/Erase Cycles	100,000 cycles (min) per block
Data Retention	Data Retention Time	10 years (min) at 85°C
Temperature Range	Operating Temperature	-40°C to +85°C
Storage Temperature	Storage Temperature	-65°C to +150°C
Programming Algorithm	Programming Method	Page Program, Block Erase, Chip Erase
Protection	Write Protect	Software Data Protection
Package Marking	Device Marking	W29C020CP90B

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage is within the specified range of 2.7V to 3.6V.
   • Connect Vcc to the appropriate power supply and Vss to ground.

2. Address Lines:

   • Connect the address lines (A0-A17) to the microcontroller or memory controller to select the desired memory location.

3. Data Lines:

   • Connect the data lines (D0-D7) to the microcontroller or memory controller for data transfer.

4. Control Signals:

   • /CE (Chip Enable): Active low. When low, the device is selected.
   • /OE (Output Enable): Active low. When low, the output buffers are enabled.
   • /WE (Write Enable): Active low. Used to initiate write operations.
   • /WP (Write Protect): Active low. When low, write operations are inhibited.

5. Read Operation:

   • Set /CE and /OE low to enable read access.
   • Apply the desired address to the address lines.
   • The data will be available on the data lines after the access time.

6. Write Operation:

   • Set /CE and /WE low to enable write access.
   • Apply the desired address to the address lines.
   • Apply the data to be written to the data lines.
   • Ensure /WP is high to allow writing.
   • Wait for the page program time to complete before initiating another operation.

7. Erase Operation:

   • Set /CE low to enable erase access.
   • Apply the appropriate command sequence for block or chip erase.
   • Wait for the erase time to complete before initiating another operation.

8. Software Data Protection:

   • Set /WP low to prevent accidental writes or erases.

9. Handling:

   • Handle the device with care to avoid static damage.
   • Store the device in a dry environment to prevent moisture damage.

10. Testing:

    • Use standard test procedures to verify the functionality of the device after installation.

(For reference only)