Details

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BUY SKD100/04 https://www.utsource.net/itm/p/271689.html
Power Bridge Rectifiers

Parameter	Description
Part Number	SKD100/04
Type	Silicon Controlled Rectifier (SCR)
Maximum Repetitive Peak Off-State Voltage (V DRM )	1000 V
Maximum RMS On-State Current (I T(RMS) )	4 A
Maximum Gate Trigger Current (I GT )	50 mA
Maximum Gate Trigger Voltage (V GT )	2 V
Junction Temperature Range (T J )	-40°C to +125°C
Storage Temperature Range (T STG )	-55°C to +150°C

Instructions:

1. Installation: Ensure the SCR is mounted on a suitable heat sink to maintain junction temperature within specified limits.
2. Gate Triggering: Apply gate current greater than I GT for reliable triggering. Ensure gate voltage does not exceed V GT .
3. Voltage Handling: Do not exceed the maximum repetitive peak off-state voltage (V DRM ) to prevent damage.
4. Current Handling: Operate within the maximum RMS on-state current (I T(RMS) ) to avoid overheating.
5. Temperature Management: Keep the device within the junction and storage temperature ranges to ensure reliability and longevity.
6. Handling Precautions: Use appropriate ESD protection when handling the device to prevent damage from static electricity.

(For reference only)