Details

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BUY CM600YE2P-12F https://www.utsource.net/itm/p/279636.html

Parameter	Description	Value	Unit
Part Number	Full part identification	CM600YE2P-12F	-
Type	Type of device	MOSFET	-
Configuration	Configuration type	N-Channel	-
Package	Package type	TO-247-3L	-
VDS (Drain-Source Volt)	Maximum drain-source voltage	600	V
VGS (Gate-Source Volt)	Maximum gate-source voltage	±20	V
ID (Continuous Current)	Continuous drain current at Tc=25°C	12	A
RDS(on)	On-resistance at VGS=10V	0.18	Ω
Power Dissipation	Maximum power dissipation	150	W
Junction Temperature	Operating junction temperature range	-55 to +150	°C
Storage Temperature	Storage temperature range	-55 to +150	°C

Instructions for Use:

1. Handling Precautions: The CM600YE2P-12F is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking when mounting due to high power dissipation capabilities.
3. Biasing: Apply the correct bias voltages to the gate relative to the source to ensure proper operation and avoid damage.
4. Operating Conditions: Operate within specified voltage and temperature limits to prevent device failure.
5. Testing: Verify all connections are secure and test in a controlled environment before deployment in final applications.

(For reference only)