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BUY MG100Q1JS9 https://www.utsource.net/itm/p/280222.html
TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG100Q1JS9 is a high voltage insulated gate bipolar transistor (IGBT) module with a maximum collector emitter voltage of 1200V. Features: - Low collector-emitter saturation voltage - High speed switching - Low noise - High reliability - Low power loss Applications: The MG100Q1JS9 is suitable for applications such as motor control, solar inverters, UPS systems, and other high voltage switching applications. (For reference only)