Details

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BUY MG150J2YS50 https://www.utsource.net/itm/p/280245.html
N channel IGBT

Parameter	Description	Value
Part Number	Component Identifier	MG150J2YS50
Type	Device Type	MOSFET
Package	Encapsulation Type	TO-220
VDS (Max)	Drain-Source Voltage	150 V
VGS (Max)	Gate-Source Voltage	±20 V
ID (Max)	Continuous Drain Current	20 A
PD (Max)	Power Dissipation	150 W
RDS(on) (Max)	On-State Resistance	5 mΩ at VGS = 10 V
fT	Transition Frequency	2 MHz
Qg	Total Gate Charge	75 nC
Qgd	Gate-Drain Charge	35 nC
Qgs	Gate-Source Charge	40 nC
Vth (Min/Typ/Max)	Threshold Voltage	2.0 / 2.5 / 3.0 V
SOA	Safe Operating Area	Refer to datasheet graph
Operating Temp.	Temperature Range	-55°C to +150°C
Storage Temp.	Storage Temperature Range	-65°C to +175°C

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage to the leads and body.
   • Use ESD (Electrostatic Discharge) protection when handling to prevent damage to the gate.

2. Mounting:

   • Ensure proper alignment of the component during soldering.
   • Use a heat sink if necessary to manage power dissipation.
   • Apply thermal paste between the heat sink and the component for better thermal conductivity.

3. Soldering:

   • Preheat the PCB to reduce thermal shock.
   • Solder within the recommended temperature range of 260°C for no more than 10 seconds per lead.
   • Allow the component to cool naturally after soldering.

4. Testing:

   • Verify the correct installation by checking continuity and resistance values.
   • Perform functional tests under controlled conditions to ensure the device operates as expected.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging to protect from moisture and static.

6. Safety:

   • Ensure all electrical connections are secure and insulated to prevent short circuits.
   • Follow all local and international safety regulations when using this component in your application.

(For reference only)