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BUY MG300Q2YS40 https://www.utsource.net/itm/p/280329.html
GTR Module Silicon N Channel IGBT
Description: MG300Q2YS40 is a power module manufactured by Toshiba. It is an insulated gate bipolar transistor (IGBT) module with a maximum collector-emitter voltage of 600V and a maximum collector current of 300A. Features: High-speed switching Low power loss High reliability Low noise High surge capability Wide operating temperature range High current capacity Application: MG300Q2YS40 is suitable for use in motor control, welding machines, UPS, and other industrial applications. (For reference only)