Details

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BUY SKM150GAR122D https://www.utsource.net/itm/p/281324.html
SEMITRANS IGBT Modules New Range

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Rated Collector-Emitter Voltage	VCEO	-	1200	-	V	Tj = 25°C, IC = 150 A
Rated Gate-Emitter Voltage	VGE	-15	0	15	V	Continuous
Rated Collector Current	IC	-	150	-	A	Tj = 25°C, VCE = 1200 V
Rated Collector Current (Pulsed)	ICM	-	300	-	A	tp = 10 ms, IF = 0 A, Tj = 25°C
Continuous Power Dissipation	Ptot	-	1800	-	W	TC = 25°C, Rth(j-c) = 0.1 K/W
Junction to Case Thermal Resistance	Rth(j-c)	-	0.1	-	K/W	-
Junction to Ambient Thermal Resistance	Rth(j-a)	-	10	-	K/W	TA = 25°C, Free Air
Maximum Junction Temperature	Tj(max)	-	-	175	°C	-
Storage Temperature Range	Tstg	-55	-	150	°C	-

Instructions for Use:

1. Mounting:

   • Ensure proper mounting to a heatsink to maintain thermal resistance within specified limits.
   • Use recommended torque values for screws to avoid damaging the module.

2. Electrical Connections:

   • Connect the collector (C), emitter (E), and gate (G) terminals correctly.
   • Use appropriate wire gauges to handle the rated currents.

3. Gate Drive:

   • Apply a gate-emitter voltage (V_GE) within the specified range to ensure reliable switching.
   • Use a gate resistor to limit the current and protect the gate from overvoltage.

4. Thermal Management:

   • Monitor the junction temperature (T_j) to prevent overheating.
   • Use forced air cooling or liquid cooling if necessary to maintain T_j below 175°C.

5. Surge Current Handling:

   • For pulsed applications, ensure that the pulse duration (t_p) does not exceed 10 ms to avoid exceeding the maximum pulsed current (I_CM).

6. Storage:

   • Store the module in a dry environment within the storage temperature range (-55°C to 150°C).
   • Avoid exposure to corrosive environments.

7. Handling:

   • Handle the module with care to avoid mechanical damage.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the gate terminal.

(For reference only)