Details

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BUY MG150Q2YS1 https://www.utsource.net/itm/p/298622.html
TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	Vcc	4.5	5.0	5.5	V	Operating supply voltage
Output Current	Iout	-	150	-	mA	Continuous output current
Quiescent Current	Iq	-	2.5	-	mA	Current consumption at no load
Operating Temp.	Toper	-40	-	85	°C	Operating temperature range
Storage Temp.	Tstg	-55	-	150	°C	Storage temperature range
Dropout Voltage	Vdo	-	1.2	-	V	Voltage difference between input and output when fully loaded
Load Regulation	ΔVout	-	0.5	-	%	Change in output voltage with load change
Line Regulation	ΔVout	-	0.1	-	%	Change in output voltage with input voltage change
Ripple Rejection	RR	60	70	80	dB	Attenuation of input ripple at 100 Hz
Thermal Resistance	θja	-	50	-	°C/W	Junction-to-ambient thermal resistance

Instructions for Use:

1. Power Supply Connection:

   • Connect the positive terminal of the power supply to the input pin (VIN).
   • Connect the negative terminal of the power supply to the ground pin (GND).

2. Output Connection:

   • Connect the load to the output pin (VOUT) and ground (GND).

3. Capacitors:

   • Place a 10 μF electrolytic capacitor between VIN and GND close to the device.
   • Place a 100 nF ceramic capacitor between VOUT and GND close to the device.

4. Thermal Management:

   • Ensure adequate heat dissipation if operating near maximum current or in high ambient temperatures.
   • Consider using a heatsink if the junction temperature exceeds 125°C.

5. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within the specified temperature ranges to ensure reliable performance.

6. Storage:

   • Store the device in a dry, cool place to prevent damage from moisture and extreme temperatures.

7. Handling:

   • Handle with care to avoid mechanical stress on the pins and body.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.

(For reference only)