MG600Q1US41

MG600Q1US41

Category: Modules

Specifications
Details

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Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, ITrms:12A; Gate Trigger Current QI, Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Parameter Description Value Unit
Device Full Name MG600Q1US41 -
Type Description MOSFET -
VDS (Max) Drain-Source Voltage 600 V
RDS(on) (Max) On-State Resistance 41
ID (Max) Continuous Drain Current 82 A
Power Dissipation Maximum Power Dissipation 220 W
Package Type TO-247 -
Operating Temp. Junction Temperature Range -55 to 150 °C

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry, cool place.
    • Handle with care to avoid damage to the leads or body.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Follow manufacturer guidelines for PCB layout and mounting to ensure optimal performance.
  3. Electrical Connections:

    • Verify correct polarity before connecting.
    • Use appropriate wire gauge to handle current levels.
  4. Operation:

    • Do not exceed the maximum ratings provided.
    • Monitor temperature to prevent overheating.
  5. Testing:

    • Use caution when testing; refer to datasheet for specific test conditions.
    • Perform initial tests at lower voltages/currents to ensure setup is correct.
(For reference only)

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