BSM50GAL120DN2

BSM50GAL120DN2

Category: ModulesIGBT

Specifications
Details

BUY BSM50GAL120DN2 https://www.utsource.net/itm/p/299227.html
IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate
Parameter Symbol Min Typ Max Unit Conditions
Continuous Drain Current ID - 50 - A Tc = 25°C
Pulse Drain Current IGM - 120 - A Tc = 25°C, tp = 10 μs
Forward Voltage VF 2.2 - 3.0 V IF = 50 A
Reverse Recovery Time trr - 60 - ns IF = 50 A, IR = 5 A
Junction Capacitance CJ0 - 400 - pF VDS = 0 V
Gate Charge QG - 90 - nC VGS = ±15 V

Instructions for Use:

  1. Handling Precautions:

    • Ensure that the device is handled with care to avoid electrostatic discharge (ESD) damage.
    • Use proper ESD protection measures such as wrist straps and anti-static mats.
  2. Mounting and PCB Design:

    • Follow recommended PCB layout guidelines to minimize inductance and ensure efficient heat dissipation.
    • Use thermal vias under the device for better heat transfer if necessary.
  3. Operating Conditions:

    • Do not exceed the maximum ratings specified in the datasheet.
    • Ensure adequate cooling solutions are implemented to maintain junction temperature within safe limits.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight and sources of heat.
    • Keep in original packaging until ready for use to prevent damage.
  5. Testing:

    • When testing the device, use appropriate test conditions as specified in the datasheet.
    • Avoid operating the device beyond its rated parameters during testing.
  6. Application Notes:

    • Refer to application notes provided by the manufacturer for specific circuit design considerations.
    • Consider using simulation tools to validate your design before prototyping.

For detailed specifications and additional information, refer to the full datasheet provided by the manufacturer.

(For reference only)

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