Details

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BUY Z8523010VSC https://www.utsource.net/itm/p/304660.html
ENHANCED SERIAL COMMUNICATIONS CONTROLLER

Parameter	Description	Value
Part Number	Component Identifier	Z8523010VSC
Type	Device Type	MOSFET
Package	Package Type	TO-220
Polarity	Polarity Type	N-Channel
VDS (Max)	Drain-to-Source Voltage	100 V
VGS (Max)	Gate-to-Source Voltage	±20 V
ID (Max)	Continuous Drain Current	30 A
RDS(on) (Max)	On-State Resistance at VGS = 10 V	4.5 mΩ
Power Dissipation	Maximum Power Dissipation	150 W
Operating Temperature	Junction Temperature Range	-55°C to +175°C
Storage Temperature	Storage Temperature Range	-65°C to +150°C
Thermal Resistance	Junction-to-Case Thermal Resistance	1.5 °C/W
Gate Charge	Total Gate Charge	150 nC
Input Capacitance	Input Capacitance at VGS = 0 V, f = 1 MHz	1200 pF
Output Capacitance	Output Capacitance at VDS = 0 V, f = 1 MHz	220 pF
Reverse Transfer Capacitance	Reverse Transfer Capacitance at VDS = 0 V, f = 1 MHz	40 pF

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid static discharge, which can damage the MOSFET.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Use thermal paste between the MOSFET and the heat sink for better thermal conductivity.

3. Electrical Connections:

   • Connect the drain (D), gate (G), and source (S) terminals correctly.
   • Apply appropriate gate drive voltages to ensure reliable operation.

4. Operational Considerations:

   • Do not exceed the maximum ratings for VDS, VGS, and ID.
   • Ensure the junction temperature remains within the specified operating range to avoid thermal damage.

5. Testing:

   • Use a multimeter or oscilloscope to verify the correct operation of the MOSFET.
   • Test the device under controlled conditions to avoid overloading.

6. Safety:

   • Always use appropriate safety equipment when handling high-voltage circuits.
   • Follow all relevant safety guidelines and regulations.

(For reference only)