Details

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BUY MG150Q2YS9 https://www.utsource.net/itm/p/323875.html
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)

Parameter	Description
Part Number	MG150Q2YS9
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
VDS (Drain-Source Voltage)	150 V
RDS(on) (On-Resistance)	2.4 mΩ (Typical @ VGS=10V, IDS=36A)
ID (Continuous Drain Current)	36 A (at Ta=25°C)
PD (Total Power Dissipation)	270 W (at Tc=25°C)
VGS(th) (Gate-Source Threshold Voltage)	2.0 to 4.0 V
Package Type	TO-247
Operating Temperature Range	-55°C to 175°C
Mounting Type	Through Hole
Lead Finish	Matte Tin

Instructions for Use:

1. Handling Precautions: The MG150Q2YS9 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Heat Sinking: Ensure adequate heat sinking for applications where the device will operate near its maximum power dissipation limits.
3. Mounting: When mounting the device, ensure that the mounting torque does not exceed the specified limit for the TO-247 package to avoid damage.
4. Voltage and Current Limits: Do not exceed the maximum ratings for VDS, ID, or PD as listed in the parameter table. Operating beyond these limits can lead to permanent damage.
5. Gate Drive Requirements: Ensure that the gate drive circuitry provides sufficient voltage levels to fully turn on the MOSFET and minimize RDS(on).
6. Thermal Management: Monitor the operating temperature and ensure it remains within the specified range to prevent thermal runaway.
7. Storage Conditions: Store in a dry, cool environment away from direct sunlight and corrosive materials.

(For reference only)