Details

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BUY SKM195GB126D https://www.utsource.net/itm/p/329604.html
Trench IGBT Modules

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES			1200	V	Maximum repetitive peak reverse voltage
Emitter-Collector Voltage	V ECS			-5	V	Maximum reverse voltage
Gate-Emitter Voltage	V GES	-20		20	V	Gate-emitter voltage range
Continuous Collector Current	I C		195		A	Collector current, DC
Pulse Collector Current	I CM		780		A	Non-repetitive peak collector current
Power Dissipation	P T		250		W	Total power dissipation
Junction Temperature	T J	-50		175	°C	Operating junction temperature range
Storage Temperature	T STG	-50		150	°C	Storage temperature range

Instructions for Use:

1. Handling Precautions:

   • Handle the SKM195GB126D with care to avoid damage to the leads and body.
   • Avoid exposure to excessive heat or moisture.

2. Mounting:

   • Ensure proper mounting to a heatsink if operating near maximum power dissipation.
   • Use thermal compound between the device and heatsink for optimal heat transfer.

3. Electrical Connections:

   • Connect the gate terminal carefully to prevent short circuits.
   • Ensure all connections are secure and insulated appropriately.

4. Operating Conditions:

   • Operate within specified voltage and current limits to ensure reliable performance.
   • Do not exceed the maximum junction temperature to prevent thermal runaway.

5. Testing:

   • Perform initial testing at lower power levels to verify correct operation.
   • Monitor temperature and performance during prolonged use.

6. Storage:

   • Store in a dry, cool environment when not in use.
   • Keep away from direct sunlight and sources of heat.

7. Disposal:

   • Dispose of according to local regulations for electronic components.
   • Recycle where possible.

(For reference only)