Details

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BUY MG100Q2YS9 https://www.utsource.net/itm/p/386460.html
Catalog Scans - Shortform Datasheet

Parameter	Description	Value
Part Number	Unique identifier for the component	MG100Q2YS9
Type	Component type	MOSFET
Package	Physical package type	TO-220
Drain-Source Voltage	Maximum voltage between drain and source	100V
Gate-Source Voltage	Maximum voltage between gate and source	±20V
Continuous Drain	Continuous drain current at 25°C	2A
Pulse Drain Current	Peak pulse drain current (t < 10ms)	8A
Power Dissipation	Maximum power dissipation at 25°C	65W
Junction Temperature	Maximum operating temperature	-55°C to 175°C
Rds(on)	On-state resistance at Vgs = 10V	0.02Ω
Gate Charge	Total gate charge	45nC
Storage Temperature	Temperature range for storage	-65°C to 150°C

Instructions:

1. Handling and Storage:

   • Store in a dry, cool place.
   • Avoid exposure to high temperatures and humidity.
   • Handle with care to prevent damage to the leads and package.

2. Mounting:

   • Ensure proper heat sinking to manage power dissipation.
   • Use a thermal compound to improve heat transfer if necessary.
   • Follow recommended soldering profiles to avoid thermal shock.

3. Electrical Connections:

   • Connect the drain, source, and gate according to the circuit diagram.
   • Ensure all connections are secure and free from short circuits.
   • Apply appropriate gate drive signals to control the MOSFET.

4. Operational Precautions:

   • Do not exceed the maximum ratings specified in the table.
   • Operate within the recommended operating conditions to ensure reliability.
   • Use appropriate protection circuits to prevent overvoltage and overcurrent conditions.

5. Testing:

   • Test the component in a controlled environment before integrating it into the final application.
   • Verify the correct operation by measuring the on-state resistance and other parameters as needed.

(For reference only)