Details

---

BUY MG200J2YS40 https://www.utsource.net/itm/p/386473.html
TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Description: The MG200J2YS40 is a 200A, 600V, three-phase insulated gate bipolar transistor (IGBT) module from Toshiba America Electronic Components. Features: Low saturation voltage High speed switching Low noise High reliability High surge capability Low inductance Application: The MG200J2YS40 is suitable for use in applications such as motor control, UPS, welding, and inverter power supplies. (For reference only)