Details

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BUY MG300Q1US11 https://www.utsource.net/itm/p/386486.html
Insulated GATE Bipolar Transistor

Parameter	Description	Value
Part Number	Component Identifier	MG300Q1US11
Type	Component Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package	Housing Type	TO-220
VDS	Drain-to-Source Voltage	300 V
VGS	Gate-to-Source Voltage	±20 V
ID	Continuous Drain Current	11 A
RDS(on)	On-State Resistance at VGS = 10 V	1.5 Ω
PTOT	Total Power Dissipation (Ta = 25°C)	90 W
TJ	Junction Temperature Range	-55°C to +150°C
TSTG	Storage Temperature Range	-65°C to +175°C
fSW	Switching Frequency	Up to 500 kHz
QG	Gate Charge	45 nC
QGD	Gate-to-Drain Charge	15 nC
QGS	Gate-to-Source Charge	10 nC
Eoss	Output Capacitance Energy	1.5 μJ
VF	Forward Voltage Drop (Body Diode)	1.2 V @ 5 A
td(on)	Turn-On Delay Time	50 ns
tr	Rise Time	60 ns
td(off)	Turn-Off Delay Time	75 ns
tf	Fall Time	85 ns

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is handled with care to avoid damage to the leads and the body.
   • Use appropriate heat sinks to manage the thermal dissipation, especially when operating at high currents or in high ambient temperatures.

2. Electrical Connections:

   • Connect the drain (D), gate (G), and source (S) terminals correctly to avoid damage.
   • Apply a suitable gate drive voltage (V_GS) to ensure proper switching performance.

3. Thermal Management:

   • Ensure that the junction temperature (T_J) does not exceed the maximum rated value of 150°C.
   • Use thermal paste or thermal interface materials between the device and the heat sink to improve thermal conductivity.

4. Switching Applications:

   • For high-frequency switching applications, minimize parasitic inductances in the circuit layout to reduce switching losses.
   • Ensure that the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly.

5. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range (-65°C to +175°C).
   • Avoid exposure to excessive humidity and corrosive environments.

6. Safety Precautions:

   • Always use appropriate personal protective equipment (PPE) when handling high-voltage components.
   • Follow all relevant safety guidelines and regulations when designing and testing circuits containing this MOSFET.

(For reference only)