Details
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Silicon N channel IGBTN
| Parameter | Description |
|---|---|
| Part Number | MG300Q1US51 |
| Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Configuration | N-Channel |
| VDS (Max Drain-Source Voltage) | 30V |
| RDS(on) (On-Resistance) | 4.5 mΩ @ VGS = 10V, ID = 80A |
| ID (Continuous Drain Current) | 96A @ Tc = 25°C |
| Power Dissipation (PD) | 170W @ TC = 25°C |
| Gate Charge (Qg) | 160 nC |
| Total Gate Charge (Qgtot) | 190 nC |
| Input Capacitance (Ciss) | 4540 pF |
| Output Capacitance (Coss) | 960 pF |
| Reverse Transfer Capacitance (Crss) | 680 pF |
| Operating Temperature Range | -55°C to +175°C |
| Package Type | TO-247 |
Instructions for Use:
- Mounting: Ensure the device is securely mounted on a heatsink or PCB with adequate thermal management to handle the power dissipation.
- Biasing: Apply gate-source voltage (VGS) within specified limits to control the drain current (ID). Avoid exceeding the maximum ratings.
- Handling Precautions: Handle with care as ESD (Electrostatic Discharge) sensitive device. Use appropriate ESD protection measures.
- Thermal Considerations: Monitor operating temperature and ensure it remains within the specified range to avoid thermal runaway.
- Polarity Awareness: Connect the device ensuring correct polarity; incorrect connections can lead to immediate failure.
- Storage Conditions: Store in original packaging away from moisture and extreme temperatures.
- Testing: Perform initial testing under controlled conditions to verify proper operation before full-scale deployment.
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