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BUY BSM10GD120DN2 https://www.utsource.net/itm/p/414780.html
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV VBRCES | 15A IC
Description: This is an Insulated Gate Bipolar Transistor (IGBT) module from Infineon Technologies. Features: 1200V blocking voltage Low inductance package Low switching loss Short-circuit capability High efficiency Improved heatsink layout Applications: This IGBT module is designed for applications with high power requirements and long switching cycles, such as welding machines, motor drives, UPS, solar inverters, etc. It is suitable for applications requiring high power density and high system efficiency. (For reference only)