Details

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BUY BSM35GD120DN2E3224 https://www.utsource.net/itm/p/414784.html
Circuit Diagram
Description: BSM35GD120DN2E3224 is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: rn 1200V blocking voltage rn 35A continuous collector current rn Low on-state voltage drop rn Low switching losses rn High frequency operation rn Short-circuit protection rn Over-temperature protection Application: BSM35GD120DN2E3224 can be used in applications such as motor control, power supplies, UPS systems, welding machines, and other industrial applications. (For reference only)