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High Efficient Rectifier Diodes

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	VBR			1200	V	Maximum repetitive peak off-state voltage
On-State Resistance	RDS(on)	3.0			mΩ	Drain-source on-resistance at specified conditions
Gate Charge	QG		160		nC	Total gate charge
Continuous Drain Current	ID		300		A	Maximum continuous drain current
Power Dissipation	PD			175	W	Maximum power dissipation
Junction Temperature	TJ	-40		175	°C	Operating junction temperature range
Storage Temperature	TSTG	-40		125	°C	Storage temperature range

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within operational limits.
   • Handle with care to avoid damage to the leads and body.

2. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly as per your circuit design.
   • Ensure that the gate drive signals are clean and within the specified voltage levels to prevent damage or malfunction.

3. Thermal Management:

   • Monitor the operating temperature and ensure it remains within the specified junction temperature range.
   • Consider forced air cooling or liquid cooling for applications where the device operates near its maximum power dissipation.

4. Protection Circuits:

   • Implement overcurrent protection to safeguard against excessive drain current.
   • Include transient voltage suppression devices to protect against voltage spikes.

5. Testing:

   • Before final assembly, test the device parameters such as RDS(on), VBR, and QG to ensure they meet the datasheet specifications.
   • Perform functional tests under actual operating conditions to verify performance.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep in original packaging until ready for use to protect from electrostatic discharge (ESD).

(For reference only)