Details

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BUY CM800HA-66H https://www.utsource.net/itm/p/414824.html
HIGH POWER SWITCHING USE INSULATED TYPE

Parameter	Description	Value
Part Number	Full part identification	CM800HA-66H
Type	Type of device	MOSFET
Package	Package type	TO-252
Polarity	Device polarity	N-Channel
VDS (Max Drain-Source Voltage)	Maximum voltage between drain and source	800 V
ID (Continuous Drain Current)	Continuous current through the drain	6.6 A
RDS(on) (On-State Resistance)	On-state resistance at specified conditions	1.3 Ω
Power Dissipation (PD)	Maximum power dissipation	24 W
Operating Temperature Range (TJ)	Junction temperature range	-55°C to 150°C
Storage Temperature Range (TSTG)	Storage temperature range	-55°C to 150°C
Gate Charge (Qg)	Total gate charge	75 nC
Input Capacitance (Ciss)	Input capacitance	1690 pF

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation to maintain device temperature within safe limits.

3. Soldering:

   • Follow standard soldering guidelines for surface mount devices. Avoid excessive heat during soldering to prevent damage.

4. Testing:

   • When testing, ensure that the applied voltages and currents do not exceed the maximum ratings listed in the table.

5. Applications:

   • Suitable for high-voltage switching applications, motor control, and power supplies.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive substances.

(For reference only)