Details

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BUY IS61WV20488BLL-10TLI https://www.utsource.net/itm/p/421245.html
2M x 8 HIGH-SPEED CMOS STATIC RAM

Parameter	Description
Device	IS61WV20488BLL-10TLI
Manufacturer	ISSI (Integrated Silicon Solution, Inc.)
Type	Synchronous SRAM
Organization	2M x 36-bit
Density	72 Mbit
Supply Voltage (Vcc)	3.3V ± 5%
Supply Voltage (Vccq)	3.3V ± 5%
Access Time (tAA)	10 ns max
Cycle Time (tCYC)	10 ns min
Output Enable Time (tOE)	2 ns max
Write Recovery Time (tWR)	3 ns max
Data Hold Time (tDH)	0.5 ns min
Address Access Time (tIS)	2 ns max
Power Consumption (Active)	200 mW typical
Power Consumption (Standby)	10 mW typical
Operating Temperature Range	-40°C to +85°C
Package	48-pin TQFP (Thin Quad Flat Package)
Pin Pitch	0.5 mm
RoHS Compliance	Yes

Instructions for Use:

1. Power Supply:

   • Connect Vcc and Vccq to a stable 3.3V power supply.
   • Ensure proper decoupling capacitors (e.g., 0.1μF and 10μF) are placed close to the power pins to minimize noise.

2. Signal Timing:

   • Ensure all timing parameters are met, especially access time (tAA) and cycle time (tCYC).
   • Use a clock signal with a frequency that allows for the required cycle time.

3. Address and Data Lines:

   • Connect address lines (A0-A19) to the appropriate address outputs from your controller.
   • Connect data lines (DQ0-DQ35) to the data inputs/outputs of your system.

4. Control Signals:

   • Chip Select (CS#): Active low. The device is selected when CS# is low.
   • Output Enable (OE#): Active low. Data outputs are enabled when OE# is low.
   • Write Enable (WE#): Active low. Writing to the device occurs when WE# is low.
   • Clock (CLK): Provides the timing reference for synchronous operations.

5. Initialization:

   • Before performing any read or write operations, ensure the device is properly powered and the control signals are set correctly.

6. Read Operation:

   • Set CS# and OE# low.
   • Apply the desired address to the address lines.
   • On the rising edge of CLK, the data at the specified address will be available on the data lines.

7. Write Operation:

   • Set CS# and WE# low.
   • Apply the desired address to the address lines.
   • Place the data to be written on the data lines.
   • On the rising edge of CLK, the data will be written to the specified address.

8. Standby Mode:

   • To enter standby mode, set CS# high. This reduces power consumption.

9. Handling and Storage:

   • Handle the device with care to avoid ESD damage.
   • Store in a dry environment to prevent moisture damage.

10. Soldering:

    • Follow the recommended soldering profile for TQFP packages to ensure reliable connections and avoid thermal damage.

(For reference only)