Details

---

BUY BSM50GD120DN2E https://www.utsource.net/itm/p/423714.html
IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate
Description: BSM50GD120DN2E is an insulated gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: 1200V blocking voltage 50A collector current Low switching losses Low noise High frequency operation High surge capability Low thermal resistance Applications: BSM50GD120DN2E is suitable for applications such as motor control, UPS, welding, solar inverters, and other high power applications. (For reference only)