Details

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BUY AT29C040A-90PC https://www.utsource.net/itm/p/427898.html
IC FLASH MEM 4M 5V 32DIP

Parameter	Description	Value
Device Type	High Performance CMOS Flash Memory	512K x 8
Package Type	Plastic DIP (PDIP)	40-pin
Operating Voltage (Vcc)	Supply Voltage Range	2.7V to 5.5V
Programming Voltage (Vpp)	Programming Voltage	12.0V ± 0.5V
Data Retention	Minimum Data Retention Time	10 years
Write Cycle Time	Time Required for a Complete Write Cycle	90 μs (max)
Read Access Time	Maximum Read Access Time	70 ns (max)
Standby Current	Maximum Standby Current at Vcc = 5.5V	1 μA (max)
Active Current	Maximum Active Current at Vcc = 5.5V	30 mA (max)
Programming Current	Maximum Programming Current per Byte	2.0 mA (max)
Temperature Range	Operating Temperature Range	-40°C to +85°C
Endurance	Number of Write/Erase Cycles	100,000 cycles
Organization	Memory Organization	64K x 8
Pin Configuration	Pin 1: A15, Pin 2: A14, ..., Pin 40: Vss	See datasheet
Package Marking	Device Marking	AT29C040A-90PC

Instructions for Use

1. Power Supply:

   • Connect Vcc to the positive supply voltage (2.7V to 5.5V).
   • Connect Vss to ground.
   • For programming, apply Vpp (12.0V ± 0.5V) to the appropriate pin.

2. Addressing:

   • Apply the desired address to the address lines (A0-A15).

3. Data Input/Output:

   • For read operations, connect the data lines (D0-D7) to the input of your microcontroller or other device.
   • For write operations, ensure the data lines are driven by the microcontroller or other device.

4. Control Signals:

   • OE (Output Enable): Low to enable output drivers.
   • WE (Write Enable): Low to initiate a write cycle.
   • CE (Chip Enable): Low to select the device.

5. Programming:

   • Set CE, OE, and WE to high.
   • Apply Vpp to the Vpp pin.
   • Set the address and data lines to the desired values.
   • Bring WE low to start the write cycle.
   • Wait for the specified write cycle time (90 μs max).
   • Bring WE high to complete the write cycle.

6. Erase:

   • To erase the entire chip, set all address lines to high, bring CE and WE low, and apply Vpp.
   • Wait for the specified erase time (typically several seconds).

7. Data Retention:

   • Store the device in a dry environment to ensure long-term data retention.

8. Handling:

   • Handle the device with care to avoid static damage.
   • Follow standard ESD precautions during handling and installation.

For detailed timing diagrams and additional information, refer to the AT29C040A-90PC datasheet.

(For reference only)