Details

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BUY AT49F040-90JI https://www.utsource.net/itm/p/445952.html
4-Megabit 512K x 8 5-volt Only CMOS Flash Memory

Parameter	Description	Value	Unit
Device Type	Non-volatile memory device	Flash Memory	-
Density	Memory size	512 K x 8	bits
Voltage Range (Vcc)	Operating voltage range	2.7 to 3.6	V
Access Time (tACC)	Maximum access time at 3.0V	90	ns
Programming Time (tP)	Typical programming time per byte	250	μs
Erase Time (tEB)	Typical block erase time	10	ms
Endurance	Number of write/erase cycles	100,000	cycles
Data Retention	Minimum data retention time	10	years
Operating Temperature Range	Operating temperature range	-40 to +85	°C
Package Type	Package type	44-pin TSOP	-
Organization	Memory organization	64K x 8	-
Sector Size	Sector size for erase operations	8 KBytes	-
Write Protection	Write protection feature	Software and Hardware	-
Power Consumption (Active)	Active current at 3.0V, 5MHz	20	mA
Power Consumption (Standby)	Standby current at 3.0V	1	μA

Instructions:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
   • Connect the Vcc pin to the power supply and GND pin to ground.

2. Addressing:

   • Use the address lines (A0-A15) to select the desired memory location.
   • The data lines (D0-D7) are used for reading from or writing to the selected memory location.

3. Read Operation:

   • Apply the desired address to the address lines.
   • Set the chip enable (CE#) and output enable (OE#) pins low to enable read operation.
   • Data will be available on the data lines after the specified access time (tACC).

4. Write Operation:

   • Apply the desired address to the address lines.
   • Set the chip enable (CE#) and write enable (WE#) pins low to enable write operation.
   • Data to be written should be present on the data lines before the write enable (WE#) goes low.
   • Wait for the specified programming time (tP) before performing another operation.

5. Erase Operation:

   • To erase a sector, apply the appropriate command sequence as specified in the device datasheet.
   • Set the chip enable (CE#) and write enable (WE#) pins low to initiate the erase command.
   • Wait for the specified erase time (tEB) before performing another operation.

6. Write Protection:

   • Use the hardware write protect (WP#) pin to prevent accidental writes or erases.
   • Set the WP# pin high to enable write protection.
   • Software write protection can also be enabled by setting specific bits in the status register.

7. Temperature Considerations:

   • Ensure the operating temperature is within the specified range of -40°C to +85°C to maintain reliable operation.

8. Power Consumption:

   • In active mode, the device consumes up to 20mA at 3.0V and 5MHz.
   • In standby mode, the device consumes approximately 1μA at 3.0V.

9. Handling:

   • Handle the device with care to avoid static damage.
   • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.

For detailed command sequences and timing diagrams, refer to the device datasheet provided by the manufacturer.

(For reference only)