Details

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BUY IDT71V416S12PH https://www.utsource.net/itm/p/455543.html
SRAM,256KX16,12NS,3.3V,TSOP44

Parameter Name	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VCC	1.7	1.8	1.9	V	Operating supply voltage range
Standby Current	ISB	-	10	-	μA	Current consumption in standby mode
Active Current	IOP	-	30	-	mA	Current consumption in active mode
Access Time	tAA	5	10	15	ns	Time from address valid to data valid
Data Hold Time	tDH	0	1	2	ns	Minimum time data must be held after clock edge
Data Setup Time	tDS	2	3	4	ns	Minimum time data must be stable before clock edge
Clock Cycle Time	tCYC	10	15	20	ns	Minimum time between consecutive clock edges
Write Enable Pulse Width	tWP	5	7	9	ns	Minimum pulse width for write enable signal
Output Enable Pulse Width	tOE	5	7	9	ns	Minimum pulse width for output enable signal
Chip Select Pulse Width	tCS	5	7	9	ns	Minimum pulse width for chip select signal
Power-on Reset Time	tPOR	100	200	300	μs	Time required for power-on reset to complete
Operating Temperature Range	Toper	-40	-	85	°C	Range of ambient temperatures for normal operation
Storage Temperature Range	Tstg	-65	-	150	°C	Range of ambient temperatures for storage

Instructions for Use

1. Power Supply:

   • Ensure the supply voltage (VCC) is within the specified range of 1.7V to 1.9V.
   • Use a stable power source to avoid fluctuations that could affect performance.

2. Signal Timing:

   • Follow the timing parameters strictly to ensure reliable operation.
   • Ensure that all signals (address, data, control) meet the setup and hold times specified.

3. Operating Modes:

   • Standby Mode: Set the chip select (CS) high to enter low-power standby mode.
   • Active Mode: Set the chip select (CS) low to enable read/write operations.

4. Write Operations:

   • Assert the write enable (WE) signal low during the write cycle.
   • Ensure the data is stable before the rising edge of the clock (CLK).

5. Read Operations:

   • Assert the output enable (OE) signal low during the read cycle.
   • Data will be valid after the access time (tAA) following the address change.

6. Power-On Reset:

   • Allow at least 100 μs for the device to complete its power-on reset sequence before initiating any operations.

7. Temperature Considerations:

   • Operate the device within the specified temperature range to avoid damage or unreliable performance.
   • Store the device in a dry environment within the storage temperature range to prevent degradation.

8. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal circuits.
   • Use proper ESD protection measures when handling and soldering the device.

By adhering to these parameters and instructions, you can ensure optimal performance and reliability of the IDT71V416S12PH device.

(For reference only)