Details

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BUY LH28F160S5HT-TW https://www.utsource.net/itm/p/464576.html
Flash ROM

Parameter	Description	Value
Device Type	Non-Volatile Memory	16M x 8-bit Flash Memory
Package	Package Type	TSOP48 (Thin Small Outline Package)
Operating Voltage (Vcc)	Supply Voltage Range	2.7V to 3.6V
Operating Temperature (Tamb)	Operating Temperature Range	-40°C to +85°C
Access Time (tAC)	Access Time	70ns (max) at Vcc = 3.0V, Ta = 25°C
Data Retention	Data Retention Time	10 years (min) at Ta = 85°C
Write Cycle Time (tWC)	Write Cycle Time	2ms (max) per byte
Erase Cycle Time (tESC)	Block Erase Time	40ms (max) for 64K block
Endurance	Program/Erase Cycles	100,000 cycles (min)
Organization	Memory Organization	2,097,152 x 8 bits
Block Size	Block Size	64K bytes
Write Protection	Software Write Protect	Yes
Power Consumption	Active Current	20mA (max) at 3.0V, 70MHz
Standby Current	Standby Current	10μA (max) at 3.0V
Package Pin Count	Number of Pins	48 pins
Pin Pitch	Pin Pitch	0.5mm
Package Dimensions	Package Size	10.0mm x 16.0mm x 1.2mm

Instructions for Use

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
   • Connect the Vcc pin to the power supply and the Vss pin to ground.

2. Address and Data Lines:

   • Connect the address lines (A0-A20) to the microcontroller or memory controller.
   • Connect the data lines (D0-D7) to the microcontroller or memory controller.

3. Control Signals:

   • Connect the control signals (OE#, WE#, CE#, WP#) as follows:
     • OE# (Output Enable): Low to enable read operations.
     • WE# (Write Enable): Low to enable write operations.
     • CE# (Chip Enable): Low to select the device.
     • WP# (Write Protect): High to allow write operations; low to protect against accidental writes.

4. Read Operation:

   • Set CE# and OE# low.
   • Apply the desired address to the address lines.
   • The data at the specified address will be available on the data lines after the access time (tAC).

5. Write Operation:

   • Set CE# and WE# low.
   • Apply the desired address to the address lines.
   • Apply the data to be written to the data lines.
   • The write operation will complete after the write cycle time (tWC).

6. Erase Operation:

   • Set CE# and WE# low.
   • Apply the erase command sequence to the address and data lines.
   • The block erase operation will complete after the erase cycle time (tESC).

7. Standby Mode:

   • Set CE# high to put the device into standby mode, reducing power consumption.

8. Software Write Protect:

   • Set WP# low to prevent any write or erase operations.

9. Handling Precautions:

   • Handle the device with care to avoid static damage.
   • Ensure proper grounding and decoupling capacitors are used to maintain stable power supply.

For detailed timing diagrams and command sequences, refer to the device datasheet.

(For reference only)