XPC8240LZU200E

XPC8240LZU200E


Specifications
Details

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INTEGRATED HOST PROC
Parameter Description
Part Number XPC8240LZU200E
Type MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration N-Channel
VDS (Max Drain-Source Voltage) ±60V
RDS(on) (On-Resistance) 2.0 mΩ @ VGS = 10V, ID = 30A
ID (Continuous Drain Current) 40A at 25°C, 30A at 70°C
PD (Power Dissipation) 229W (at TC = 25°C)
Qg (Total Gate Charge) 75 nC
VGS(th) (Gate Threshold Voltage) 2.0V to 4.0V
Package Type TO-247-3L
Operating Temperature Range -55°C to +175°C

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry environment away from direct sunlight.
    • Handle with care to avoid damage to the pins and body.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Follow recommended PCB layout guidelines for optimal thermal performance.
  3. Electrical Connections:

    • Verify all connections are secure and correct before applying power.
    • Use appropriate gate drive circuits to ensure reliable switching operation.
  4. Safety Precautions:

    • Always use protective equipment when handling high voltage or high current circuits.
    • Ensure the device is properly isolated during testing and operation to prevent electrical shock.
  5. Testing:

    • Test the device under controlled conditions, starting with low voltages and currents.
    • Monitor temperature and performance parameters closely during initial testing phases.
  6. Application Notes:

    • Refer to the manufacturer’s application notes for detailed information on specific applications and advanced configurations.
(For reference only)

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