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BUY S29GL128P11TFI010 https://www.utsource.net/itm/p/843671.html
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
Description: 128Mb (8M x 16) CMOS 3.0V SuperFlash EEPROM Features: - Fast Read Access Times: 90/70/50/30/25/20/15/10 ns - Fast Program Times: 1.5/3/6/12/25/50/100/200/400/800/1600/3200/6400/12800/25600/51200/102400 us - Low Power Consumption: Active: 55 mA (typical) - Endurance: 100,000 Program/Erase Cycles - Data Retention: 20 Years - Security Features: Block Lock Protection, Chip Erase, Program Suspend/Resume Applications: - Automotive - Industrial - Consumer - Computing - Communications (For reference only)