Details

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BUY CY62256LL-70SNXC https://www.utsource.net/itm/p/844063.html
IC SRAM 256KBIT PARALLEL 28SOIC

Below is the parameter table and instructions for the CY62256LL-70SNXC, a 32K x 8 CMOS Static RAM from Cypress Semiconductor.

Parameter Table for CY62256LL-70SNXC

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	VCC	4.5	5.0	5.5	V
Standby Current	ICC	-	10	20	μA	VCC = 5V, VPP = 0V, CE = 1, OE = 1, WE = 1
Active Current	ICC	-	100	150	mA	VCC = 5V, VPP = 5V, CE = 0, OE = 0, WE = 0
Output High Level	VOH	2.4	-	5.0	V	VCC = 5V, IOH = -4mA
Output Low Level	VOL	0.0	-	0.4	V	VCC = 5V, IOL = 4mA
Access Time	tAA	0	70	90	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0, WE = 0
Write Cycle Time	tWC	0	70	90	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0, WE = 0
Address Setup Time	tAS	20	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0, WE = 0
Address Hold Time	tAH	0	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0, WE = 0
Data Setup Time	tDS	20	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0, WE = 0
Data Hold Time	tDH	0	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0, WE = 0
Chip Enable Setup Time	tCES	20	-	-	ns	VCC = 5V, VPP = 5V, OE = 0, WE = 0
Chip Enable Hold Time	tCEH	0	-	-	ns	VCC = 5V, VPP = 5V, OE = 0, WE = 0
Output Enable Setup Time	tOES	20	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, WE = 0
Output Enable Hold Time	tOEH	0	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, WE = 0
Write Enable Setup Time	tWES	20	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0
Write Enable Hold Time	tWEH	0	-	-	ns	VCC = 5V, VPP = 5V, CE = 0, OE = 0

Instructions for CY62256LL-70SNXC

1. Power Supply:

   • Ensure that the supply voltage (VCC) is within the specified range of 4.5V to 5.5V.
   • The device does not require a separate programming voltage (VPP) as it operates with a single supply voltage.

2. Pin Configuration:

   • VCC: Power supply pin.
   • GND: Ground pin.
   • A0-A14: Address lines (15 bits).
   • DQ0-DQ7: Data input/output lines (8 bits).
   • CE: Chip enable (active low).
   • OE: Output enable (active low).
   • WE: Write enable (active low).

3. Operation Modes:

   • Read Operation:
     • Set CE and OE to low (0V).
     • Apply the desired address to A0-A14.
     • Data will be available on DQ0-DQ7 after the access time (tAA).
   • Write Operation:
     • Set CE and WE to low (0V).
     • Apply the desired address to A0-A14.
     • Apply the data to be written to DQ0-DQ7.
     • Data will be written to the memory location after the write cycle time (tWC).

4. Timing Considerations:

   • Ensure that all setup and hold times are met to avoid data corruption or incorrect operation.
   • The access time (tAA) and write cycle time (tWC) are critical for high-speed applications.

5. Power Consumption:

   • The device has low standby current (ICC) when CE, OE, and WE are high (1V).
   • Active current (ICC) increases during read and write operations.

6. Handling and Storage:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Store in a dry environment to prevent moisture damage.

7. Package Information:

   • The CY62256LL-70SNXC is available in a 28-pin SOP (Small Outline Package) or 28-pin TSSOP (Thin Small Outline Package).

By following these parameters and instructions, you can ensure reliable and efficient operation of the CY62256LL-70SNXC static RAM.

(For reference only)