Details

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BUY M48Z58Y-70PC1 https://www.utsource.net/itm/p/860839.html
64 Kbit 8Kb x 8 ZEROPOWER SRAM

Parameter	Description	Value
Part Number	Full part number	M48Z58Y-70PC1
Type	Device type	EEPROM (Electrically Erasable Programmable Read-Only Memory)
Capacity	Storage capacity	512 Kbits (64 KBytes)
Organization	Data organization	8K x 8
Vcc Range	Operating voltage range	2.5V to 5.5V
Icc	Supply current (active mode)	1.0 mA (max) at 5V, 1 MHz
Standby Current	Supply current (standby mode)	1.0 μA (max) at 5V
Operating Temperature	Temperature range	-40°C to +85°C
Write Time	Typical write time	5 ms (max)
Data Retention	Data retention time	100 years (min)
Endurance	Write/erase cycles	1,000,000 cycles (min)
Package	Package type	8-pin SOIC (Small Outline Integrated Circuit)
Polarity	Data polarity	Positive logic
Access Time	Access time	100 ns (max)
Clock Frequency	Maximum clock frequency	1 MHz
Interface	Communication interface	SPI (Serial Peripheral Interface)
Pin Configuration	Pinout	CS (Chip Select), SCK (Serial Clock), MOSI (Master Out Slave In), MISO (Master In Slave Out), Vcc, GND

Instructions for Use:

1. Power Supply:

   • Connect Vcc to a stable power supply within the range of 2.5V to 5.5V.
   • Ground GND to a common reference point.

2. SPI Interface:

   • CS (Chip Select): Active low. Pull low to select the device for communication.
   • SCK (Serial Clock): Connect to the system clock. Ensure the clock frequency does not exceed 1 MHz.
   • MOSI (Master Out Slave In): Connect to the data output of the master device.
   • MISO (Master In Slave Out): Connect to the data input of the master device.

3. Initialization:

   • Before any read or write operation, ensure the device is selected by pulling CS low.
   • After each operation, de-select the device by pulling CS high.

4. Read Operation:

   • Send the read command followed by the address to be read.
   • The device will respond with the data stored at the specified address.

5. Write Operation:

   • Send the write enable command (WREN).
   • Send the write command followed by the address and data to be written.
   • Wait for the write cycle to complete (typically 5 ms).

6. Status Check:

   • Use the read status register command (RDSR) to check the status of the device, including whether a write operation is in progress.

7. Power Management:

   • To reduce power consumption, use the standby mode by ensuring CS is high when not in use.
   • For optimal performance and longevity, avoid frequent write operations and ensure proper power cycling.

8. Handling:

   • Handle the device with care to avoid static damage.
   • Follow ESD (Electrostatic Discharge) precautions during handling and installation.

9. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.

(For reference only)