Details
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QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 60 | - | V |
| Gate-Source Voltage | VGS | -10 | - | 10 | V |
| Continuous Drain Current | ID | - | 2.5 | - | A |
| Pulse Drain Current (tp = 8/72 μs) | IDpeak | - | 4.5 | - | A |
| Gate Charge | QG | - | 23 | - | nC |
| Input Capacitance | Ciss | - | 100 | - | pF |
| Output Capacitance | Coss | - | 20 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 20 | - | pF |
| RDS(on) at VGS = 4.5V | RDS(on) | - | 0.085 | - | Ω |
| RDS(on) at VGS = 10V | RDS(on) | - | 0.055 | - | Ω |
| Junction Temperature | TJ | -55 | - | 150 | °C |
| Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 60V.
- The gate-source voltage (VGS) should be within ±10V.
Current Ratings:
- The continuous drain current (ID) should not exceed 2.5A.
- For pulse applications, the peak drain current (IDpeak) can go up to 4.5A for short durations (8/72 μs).
Thermal Management:
- The junction temperature (TJ) must be kept between -55°C and 150°C.
- The storage temperature (TSTG) should also be within the same range.
Capacitance Considerations:
- Account for the input capacitance (Ciss) of 100pF, output capacitance (Coss) of 20pF, and reverse transfer capacitance (Crss) of 20pF in your circuit design.
On-Resistance:
- The on-resistance (RDS(on)) is 0.085Ω at VGS = 4.5V and 0.055Ω at VGS = 10V. Ensure that the gate voltage is sufficient to minimize power dissipation.
Handling Precautions:
- Handle the VN772K with care to avoid damage from electrostatic discharge (ESD).
- Use proper heat sinks if operating near the maximum current or power ratings.
Mounting:
- Follow the manufacturer’s recommended PCB layout and mounting guidelines to ensure optimal performance and reliability.
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